data sheet semiconductor http://www.yeashin.com 1 rev.02 20120305 kbj4005g thru kbj410g 4.0a glass passi vated bridge rectifier fe a t ures ?e glass pa ssiv a ted die con s truction ?e high ca se diele c tric s t reng th of 150 0vrms ?e l o w re v e rse le akage curren t ?e surge ov erload rating to 120a pea k ?e ideal for prin ted circui t boa r d a ppli c ati ons ?e plasti c ma terial - ul flammability classi fi cati on 9 4 v- 0 ?e ul li sted under recogni zed comp onent ind e x , file number e 9466 1 ?e high tempera t ure sol dering : 260 o c / 10 se cond s at te r m inals ?e pb free produ ct a t av ailable : 99% s n abov e meet rohs env ironment su bst a nce dire ctiv e reque st m e c h an i c al d a t a ?e c a se : m o lde d pl asti c ?e termina l s: plate d lead s, sol derabl e per mil-std-202, me thod 208 ?e polari ty : molded on body ?e mou n ting : throu gh hole for #6 s c re w ?e m o un t i n g t o r q u e : 5. 0 i n - l bs m a xi m u m ?e approx . w e igh t : 4.6 grams ?e mar k ing : ty pe number maximu m ra tin g s an d electric a l charac teristic s @ t a = 25 x c unless ot her w ise speci fied kbj d i m m i n ma x a 2 4 . 8 0 2 5 . 2 0 b 1 4 . 7 0 1 5 . 3 0 c 400 nominal d 1 7 . 2 0 1 7 . 8 0 e 0 . 9 0 1 . 1 0 g 7 . 3 0 7 . 7 0 h 3.10 r 3 . 4 0 r j 3 . 3 0 3 . 7 0 k 1 . 9 0 2 . 1 0 l 9 . 3 0 9 . 7 0 m 2 . 5 0 2 . 9 0 n 3 . 4 0 3 . 8 0 p 4 . 4 0 4 . 8 0 r 0 . 6 0 0 . 8 0 a ll d i men s io n s in mm single p hase , hal f w a v e , 60hz, re sisti v e or inductiv e load . for cap a ci tiv e load, dera t e curr ent by 20%. characterist i c s y m bol kbj 4005g kbj 401g kbj 402g kbj 404g kbj 406g kbj 408g kbj 410g uni t peak repet i tiv e r e v e rse volt age w o r k i n g p e ak re ve r s e v o l t a g e dc bl ocki ng vo l t age vrrm vr w m vr 5 0 1 0 0 2 0 0 4 0 0 6 0 0 8 0 0 1000 v rm s re ve r s e v o lta g e vr(rms) 3 5 7 0 1 4 0 2 8 0 4 2 0 5 6 0 7 0 0 v a verage rectif ied output current @ tc = 100 x c i o 4 . 0 a non-repeti ti v e pe ak for w a r d su r g e cur r e nt, 8 . 3 ms s i ngl e hal f-si n e- w a v e su per i mposed on r a ted l o ad (jedec method) i f s m 1 5 0 a forw a rd voltage per e l em ent @ if = 4.0 a v f m 1 . 0 v peak rev e rse current @tc = 25 x c at rated dc b l ock i ng vol t age @ tc = 125 x c ir m 5.0 500 g a t y pi cal juncti on capaci tan ce pe r e l ement (note 1) c j 4 0 p f t y pical therma l r esistance (note 2 ) r c ja 5.5 j /w oper ati ng and sto r age tempe r atur e range tj, tstg -55 to +150 j notes: 1. measured at 1 . 0 mh z and ap plied rev e rse v o ltage of 4 . 0v dc. 2. thermal re si sta n c e from jun c tio n to case pe r eleme n t. unit moun ted on 30 0 x 300 x 1.6mm al uminum pla t e h eat sin k . _ a b d j k c e g h l m n p r kbj(mm)
http://www.yeashin.com 2 rev.02 20120305 kbj4005g thru kbj410g device characteristics 0.01 0.1 1.0 10 0 0.4 0.8 1.2 1.6 1.8 v , instantaneous forward voltage (v) fi g .2 t y pical forward characteristics f i , instantaneous for ward current (a) f 1 10 100 i , peak fwd surge current (a) fsm number of cycles at 60 hz fi g . 3 max non-repetitive sur g e current 0.1 1.0 10 100 c , junction cap acitance (pf) j v , reverse voltage (v) fi g .4 t y pical junction capacitance r 02040 6080 100 120 140 i , instantaneous reverse current (a) r percent of rated peak reverse voltage (%) fi g .5 t y pical reverse characteristics 25 50 75 100 125 150 i , average rectified current (a) o t , case temperature (c) fi g . 1 forward current deratin g curve c
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